Trench MOSFET. MDD1502 Datasheet

MDD1502 MOSFET. Datasheet pdf. Equivalent

MDD1502 Datasheet
Recommendation MDD1502 Datasheet
Part MDD1502
Description Single N-channel Trench MOSFET
Feature MDD1502; MDD1502 – Single N-Channel Trench MOSFET 30V MDD1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5.
Manufacture MagnaChip
Datasheet
Download MDD1502 Datasheet





MagnaChip MDD1502
MDD1502
Single N-channel Trench MOSFET 30V, 45.7A, 8.5mΩ
General Description
The MDD1502 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDD1502 is suitable device for DC to DC
converter and general purpose applications.
Features
VDS = 30V
ID = 45.7A @VGS = 10V
RDS(ON) (MAX)
< 8.5m@VGS = 10V
< 13.0m@VGS = 4.5V
100% UIL Tested
100% Rg Tested
D
G
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
45.7
36.6
20.4(3)
16.3(3)
100
31.2
20.0
6.2(3)
4.0(3)
47
-55~150
Unit
V
V
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
May. 2011. Version 1.2
1
Symbol
RθJA
RθJC
Rating
20.0
4.0
Unit
oC/W
MagnaChip Semiconductor Ltd.



MagnaChip MDD1502
Ordering Information
Part Number
MDD1502RH
Temp. Range
-55~150oC
Package
D-PAK
Packing
Tape & Reel
Quantity
3000 units
Rohs Status
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
Min Typ
Max Unit
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 16A
VGS = 4.5V, ID = 13A
VDS = 5V, ID = 10A
TJ=55oC
TJ=125oC
30
1.6
-
-
-
-
-
-
-
-
2.0
-
-
-
7.4
10.7
10.8
25
-
2.7
1
5
±0.1
8.5
12.3
13.0
-
V
µA
mΩ
S
VDS = 15.0V, ID = 16A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 15.0V,
ID = 16A , RG = 3.0Ω
f=1 MHz
10.7 14.3
5.0 6.7
- 2.6
- 2.3
696 928
68 90
132 176
- 7.2
- 12.0
- 22.8
- 8.1
- 3.5
17.9
8.4
-
-
1160
113
220
-
-
-
-
5.0
nC
pF
ns
IS = 16A, VGS = 0V
IF = 16A, dl/dt = 100A/µs
- 0.8 1.1 V
-
20.4 30.6
ns
- 11.9 17.9 nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 17.0A, VDD = 27V, VGS = 10V.
3. T < 10sec.
May. 2011. Version 1.2
2 MagnaChip Semiconductor Ltd.



MagnaChip MDD1502
40
VGS = 10V
4.0V
30 4.5V
5.0V
20
10
3.5V
3.0V
0
0.0 0.5 1.0 1.5 2.0 2.5
V , Drain-Source Voltage [V]
DS
Fig.1 On-Region Characteristics
3.0
1.8
Notes :
1.6
1. VGS = 10 V
2. ID = 16.0 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
16
12 VGS = 4.5V
8 VGS = 10V
4
0
5 10 15 20 25 30 35
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
100
Notes :
ID = 16.0A
80
60
40
TA = 25
20
0
2 3 4 5 6 7 8 9 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
16
Notes :
VDS = 5V
12
8
TA=25
4
0
01234
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
5
Notes :
VGS = 0V
101
100
TA=25
10-1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
May. 2011. Version 1.2
3 MagnaChip Semiconductor Ltd.





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