APM3055L

APM3055L N-Channel Enhancement Mode MOSFET Features Pin Description 30V/12A, RDS(ON)=100mΩ(max) @ V =10V GS RDS(ON)=200mΩ(max) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages Applications Switching Regulators Switching Converters 123 GD S Top View of TO-252 1 23 G DS Top View of SOT-223 Ordering and Marking Information APM3055L AP M 3055L U /V : APM3055L XXXXX H andling C ode Temp. Range Package Code Package Code U : TO -252 V : SO T-223 O peration Junction Tem p. Range C : -55 to 150° C H andling C ode TR : Tape & Reel XXXXX - Date Code Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol VDSS VGSS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Rating 30 ±20 15 30 Unit V A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 1 www.anpec.com.tw APM3055L Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ Maximum Junction Temperature TSTG Storage Temperature Range TO-252 SOT-223 TO-252 SOT-223 Rating 50 3 20 1.2 150 -55 to 150 Unit W °C °C Electrical Characteristics (TA = 25°C unless ot...