STP7NA60 STP7NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
ST P 7NA 60 ST P 7NA 60 F I
VDSS
600 V...
STP7NA60 STP7NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE
ST P 7NA 60 ST P 7NA 60 F I
VDSS
600 V 600 V
R DS( on)
<1Ω <1Ω
ID
7.2 A 4.4 A
s TYPICAL RDS(on) = 0.92 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0) VDG R Drain-gate Voltage (RG S = 20 kΩ) VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM() Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC
Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
3 2 1
TO-220
3 2 1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Val ue
STP7NA60
STP7NA60FI
600
600
± 30
7.2 4.4
4.6 2.8
29 29
125 45
1 0.36
2000
-65 to 150
150
U...