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OP520 Dataheets PDF



Part Number OP520
Manufacturers OPTEK
Logo OPTEK
Description SMD Silicon Phototransistor
Datasheet OP520 DatasheetOP520 Datasheet (PDF)

SMD Silicon Phototransistor OP520, OP521 OP520, OP521 • High Photo Sensitivity • Fast Response Time • 1206 Package Size • Opaque or Water Clear Flat Lens Description: The OP520 and OP521 are NPN silicon phototransistor mounted in miniature SMT packages. Both the OP520 and OP521 have a flat lens however, the OP520 lens is opaque to shield the device from stray light. These sensors are packaged in 1206 size chip carriers that are compatible with most automated mounting equipment. The OP520 and O.

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SMD Silicon Phototransistor OP520, OP521 OP520, OP521 • High Photo Sensitivity • Fast Response Time • 1206 Package Size • Opaque or Water Clear Flat Lens Description: The OP520 and OP521 are NPN silicon phototransistor mounted in miniature SMT packages. Both the OP520 and OP521 have a flat lens however, the OP520 lens is opaque to shield the device from stray light. These sensors are packaged in 1206 size chip carriers that are compatible with most automated mounting equipment. The OP520 and OP521 are mechanically and spectrally matched to the OP250 series infrared LEDs. Applications • Non-Contact Position Sensing • Datum detection • Machine automation • Optical encoders Darker Green Mark RECOMMENDED SOLDER PADS [4.60±0.10] .181±.0039 [1.50±0.10] .059±.0039 [1.60±0.10] .063±.0039 [1.60±0.10] .063±.0039 RoHS OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com Issue 1.3 05/10 Page 1 of 3 SMD Silicon Phototransistor OP520, OP521 Absolute Maximum Ratings TA = 25o C unless otherwise noted Storage Temperature Range Operating Temperature Range Lead Soldering Temperature Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/° C above 25° C. -40° C to +85° C -25° C to +85° C 260° C(1) 30 V 5V 20 mA 75 mW(2) Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS IC(ON) VCE(SAT) ICEO V(BR)CEO V(BR)ECO tr, tf On-State Collector Current 0.25 Collector-Emitter Saturation Voltage 0.4 Collector-Emitter Dark Current 100 Collector-Emitter Breakdown Voltage 30 Emitter-Collector Breakdown Voltage 5 Rise and Fall Times 15 mA VCE = 5.0V, Ee = 5.0mW/cm2 (3) V IC = 100µA, Ee = 5.0mW/cm2 (3) nA VCE = 5.0V, Ee = 0 (4) V IC = 100µA, Ee = 0 V IE = 100µA, Ee = 0 µs IC = 1mA, RL = 1KΩ 3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To Calculate typical collector dark current in µA, use the formula ICEO = 10(0.04Ta-3.4) where Ta is the ambient temperature in ° C. Relative Collector Current Relative Collector Current Relative On-State Collector Current vs. Irradiance 160% Normalized at Ee = 5mW/cm2 Conditions: VCE = 5V, 140% λ = 935nm, TA = 25 °C 120% 100% 80% 60% 40% 20% Relative On-State Collector Current vs. Temperature 140% 130% Normalized at TA = 25°C . Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 80°C 120% 110% 100% 90% 80% -40°C 70% 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -25 0 25 50 75 Ee—Irradiance (mW/cm2) Temperature—(°C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. 100 Issue 1.3 05/10 Page 2 of 3 OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com SMD Silicon Phototransistor OP520, OP521 Relative Response 100% 80% Relative Response vs. Angular Position 60% 40% 20% 0% -90 -60 -30 0 30 60 Angular Position (Degrees) 90 IC(ON) - On-State Collector Current (mA) Relative On-State Collector Current vs. Collector-Emitter Voltage 1.40 6 mW/cm2 1.20 5 mW/cm2 1.00 4 mW/cm2 0.80 0.60 0.40 3 mW/cm2 2 mW/cm2 0.20 1 mW/cm2 0 0.1 0.2 0.3 0.4 0.5 Collector-Emitter Voltage (V) Collector-Emitter Dark Current (nA) Collector-Emitter Dark Current vs. Temperature 1000 Conditions: Ee = 0 mW/cm2 VCE = 10V 100 10 1 0 -25 0 25 50 75 100 Temperature—(°C) Relative Response Relative Response vs. Wavelength 100% 80% 60% 40% 20% OP521 OP520 0% 400 500 600 700 800 900 1000 1100 Wavelength (nm) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com Issue 1.3 05/10 Page 3 of 3 .


B886 OP520 OP521


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