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G6849-01

Hamamatsu Corporation

InGaAs PIN photodiode

InGaAs PIN photodiodes G6849 series Quadrant type Features Photosensitive area G6849 : φ2 mm quadrant element G6849-01:...


Hamamatsu Corporation

G6849-01

File Download Download G6849-01 Datasheet


Description
InGaAs PIN photodiodes G6849 series Quadrant type Features Photosensitive area G6849 : φ2 mm quadrant element G6849-01: φ1 mm quadrant element Low noise High reliability Applications Light spot position detection Measurement equipment Structure Parameter Photosensitive area Number of elements Package Window material G6849 φ2/quadrant 4 TO-5 Borosilicate glass G6849-01 φ1/quadrant Unit mm - Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage VR 5 V Operating temperature Topr -40 to +85 °C Storage temperature Tstg -55 to +125 °C Soldering condition - 260 °C or less, within 10 s - Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, per 1 element) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Dark current Temperature coefficient of ID Cutoff frequency Terminal capacitance Shunt resistance Detectivity Noise equivalent power Symbol λ λp S ID ΔTID fc Ct Rsh D* NEP Condition λ=1.3 μm λ=1.55 μm VR=1 V VR=1 V VR=1 V, RL=50 Ω λ=1.3 μm, -3 dB VR=1 V, f=1 MHz VR=10 mV λ=λp λ=λp Min. - 0.8 0.85 - 15 10 1 × 1012 - G6849 Typ. 0.9 to 1.7 1.55 0.9 0.95 0.5 1.09 30 100 50 5 × 1012 2 × 10-14 Max. 5 - - 160 - 6 × 10-14 Min. - 0.8 0.85 - G6849-01 Typ. 0.9 to 1.7 1.55 0.9 0.95 0.15 1.09 Max. - 1.5 - Unit μm μm A/W nA times/°C 80 120 - ...




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