InGaAs PIN photodiode
InGaAs PIN photodiodes
G6849 series Quadrant type
Features
Photosensitive area G6849 : φ2 mm quadrant element G6849-01:...
Description
InGaAs PIN photodiodes
G6849 series Quadrant type
Features
Photosensitive area G6849 : φ2 mm quadrant element G6849-01: φ1 mm quadrant element Low noise High reliability
Applications
Light spot position detection Measurement equipment
Structure
Parameter Photosensitive area Number of elements Package Window material
G6849 φ2/quadrant
4 TO-5 Borosilicate glass
G6849-01 φ1/quadrant
Unit mm
-
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR
5
V
Operating temperature Topr
-40 to +85
°C
Storage temperature
Tstg
-55 to +125
°C
Soldering condition
-
260 °C or less, within 10 s
-
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Spectral response range Peak sensitivity wavelength
Photosensitivity
Dark current Temperature coefficient of ID
Cutoff frequency
Terminal capacitance Shunt resistance Detectivity Noise equivalent power
Symbol
λ λp
S
ID ΔTID
fc
Ct Rsh D* NEP
Condition
λ=1.3 μm λ=1.55 μm VR=1 V VR=1 V VR=1 V, RL=50 Ω λ=1.3 μm, -3 dB VR=1 V, f=1 MHz VR=10 mV λ=λp λ=λp
Min. -
0.8 0.85
-
15
10 1 × 1012 -
G6849 Typ.
0.9 to 1.7 1.55 0.9 0.95 0.5 1.09
30
100 50 5 × 1012 2 × 10-14
Max. 5 -
-
160 -
6 × 10-14
Min. -
0.8 0.85
-
G6849-01 Typ.
0.9 to 1.7 1.55 0.9 0.95 0.15 1.09
Max. -
1.5 -
Unit
μm μm
A/W
nA times/°C
80 120 - ...
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