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BZX83C15 Dataheets PDF



Part Number BZX83C15
Manufacturers CDIL
Logo CDIL
Description SILIICON PLANAR ZENER DIODES
Datasheet BZX83C15 DatasheetBZX83C15 Datasheet (PDF)

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILIICON PLANAR ZENER DIODES IS/ISO 9002 Lic# QSC/L-000019.3 BZX83C 2V7 to 56V 500mW DO- 35 Glass Axial Package Best suited for Industrial, Military and Space Applications. The glass passivated diode chip in the hermetically sealed glass package with double studs provides excellent stability and reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) DESCRIPTION Power Dissipation Junction Temperature Storage Temperature.

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILIICON PLANAR ZENER DIODES IS/ISO 9002 Lic# QSC/L-000019.3 BZX83C 2V7 to 56V 500mW DO- 35 Glass Axial Package Best suited for Industrial, Military and Space Applications. The glass passivated diode chip in the hermetically sealed glass package with double studs provides excellent stability and reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) DESCRIPTION Power Dissipation Junction Temperature Storage Temperature Thermal Resistance - Junction to Ambient in free air SYMBOL PTA Tj Tstg Rth(j-a) VALUE 500 175 - 55 to +175 300 UNIT mW °C °C °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) Forward Voltage @ IF=200mA VF < 1.2 V Device VZT @ IZT* BZX83C 2V7 BZX83C 3V0 BZX83C 3V3 BZX83C 3V6 BZX83C 3V9 BZX83C 4V3 BZX83C 4V7 BZX83C 5V1 BZX83C 5V6 BZX83C 6V2 BZX83C 6V8 BZX83C 7V5 BZX83C 8V2 BZX83C 9V1 BZX83C 10 BZX83C 11 BZX83C 12 BZX83C 13 BZX83C 15 BZX83C 16 BZX83C 18 BZX83C 20 BZX83C 22 BZX83C 24 BZX83C 27 min (V) 2.50 2.80 3.10 3.40 3.70 4.00 4.40 4.80 5.20 5.80 6.40 7.00 7.70 8.50 9.40 10.40 11.40 12.40 13.80 15.30 16.80 18.80 20.80 22.80 25.10 rZT @ IZT* IZT max (V) 2.90 3.20 3.50 3.80 4.10 4.60 5.00 5.40 6.00 6.60 7.20 7.90 8.70 9.60 10.60 11.60 12.70 14.10 15.60 17.10 19.10 21.20 23.30 25.60 28.90 max (Ω) 90 90 90 90 90 80 80 60 40 10 8 7 7 10 15 20 20 25 30 40 55 55 58 80 80 (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 rZK @ IZK max (Ω) 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 220 220 250 IZK (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Temp. Coeff of Zener Voltage typ (%/°C) -0.07 -0.07 -0.06 -0.06 -0.05 -0.03 -0.01 +0.01 +0.03 +0.04 +0.05 +0.05 +0.06 +0.06 +0.07 +0.07 +0.07 +0.07 +0.08 +0.08 +0.08 +0.08 +0.08 +0.08 +0.09 IR @ Ta 25°C max (µA) 100 60 30 20 10 5 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VR IZM max (V) (mA) 1.0 135 1.0 125 1.0 115 1.0 105 1.0 95 1.0 90 1.0 85 1.0 75 1.0 70 2.0 64 3.0 58 3.5 53 4.0 47 5.0 43 6.0 40 8.2 36 9.1 32 10 29 11 27 12 24 13 21 15 20 16 18 18 16 20 14 *Pulse Condition : 20ms < tp <50ms . Duty Cycle <2% Continental Device India Limited Data Sheet Page 1 of 4 SILIICON PLANAR ZENER DIODES BZX83C 2V7 to 56V 500mW ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) DO- 35 Glass Axial Package Device BZX83C 30 BZX83C 33 BZX83C 36 BZX83C 39 BZX83C 43 BZX83C 47 BZX83C 51 BZX83C 56 VZT @ IZT* min (V) 28.00 31.00 34.00 37.00 40.00 44.00 48.00 52.00 rZT @ IZT* IZT max (V) 32.00 35.00 38.00 41.00 46.00 50.00 54.00 60.00 max (Ω) 90 90 90 100 100 120 135 145 (mA) 5.0 5.0 5.0 2.5 2.5 2.5 2.5 2.5 rZK @ IZK max (Ω) 250 250 250 600 700 1000 1000 1000 IZK (mA) 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 Temp. Coeff of Zener Voltage typ (%/°C) +0.09 +0.09 +0.09 +0.09 +0.09 +0.09 +0.09 +0.09 IR @ Ta 25°C max (µA) 1 1 1 1 1 1 1 1 VR IZM.



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