FDMS7606

FDMS7606 Dual N-Channel PowerTrench® MOSFET May 2011 FDMS7606 Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Features General Description Q1: N-Channel „ Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 11.5 A „ Max rDS(on) = 15.7 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel „ Max rDS(on) = 11.6 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 17.2 mΩ at VGS = 4.5 V, ID = 9.5 A „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook Charger S2 S2 S2 G2 S1/D2 D1 D1 D1 D1 G1 Top Bottom Pin1 Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Characteristics S2 5 S2 6 S2 7 G2 8 Q2 4 D1 3 D1 2 D1 Q1 1 G1 (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 4) TA = 25°C TA = 25°C Q1 Q2 30 30 ±20 ±20 12 22 41 11.51a 39 121b 50 60 25 2.21a 1.01c ...