FDMS7608S

FDMS7608S Dual N-Channel PowerTrench® MOSFET May 2014 FDMS7608S Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 22 A, 10.0 mΩ Q2: 30 V, 30 A, 6.3 mΩ Features General Description Q1: N-Channel „ Max rDS(on) = 10.0 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel „ Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 7.2 mΩ at VGS = 4.5 V, ID = 13 A „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency. Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE S2 S2 S2 G2 S2 Q2 D1 S1/D2 D1 S2 D1 D1 D1 D1 G1 S2 D1 Top Bottom Pin1 G2 Q1 G1 Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) TC = 25 °C TA = 25 °C (Note 4) TA = 25°C TA = 25°C Q1 Q2 30 30 ±20 ±20 22 121a 30 151b 50 60 29 2.21a 1.01c 33 2.51b 1.01d -55 to +150 Units V V A mJ W °C R...