Dual N-Channel MOSFET
FDMS7608S Dual N-Channel PowerTrench® MOSFET
May 2014
FDMS7608S
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 22 A, 10....
Description
FDMS7608S Dual N-Channel PowerTrench® MOSFET
May 2014
FDMS7608S
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 22 A, 10.0 mΩ Q2: 30 V, 30 A, 6.3 mΩ
Features
General Description
Q1: N-Channel Max rDS(on) = 10.0 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 7.2 mΩ at VGS = 4.5 V, ID = 13 A RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
Applications
Computing Communications General Purpose Point of Load Notebook VCORE
S2
S2 S2 G2
S2
Q2
D1
S1/D2
D1
S2
D1
D1
D1 D1 G1
S2
D1
Top
Bottom Pin1
G2
Q1 G1
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited)
-Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3) TC = 25 °C TA = 25 °C
(Note 4) TA = 25°C TA = 25°C
Q1
Q2
30
30
±20
±20
22 121a
30 151b
50
60
29 2.21a 1.01c
33 2.51b 1.01d
-55 to +150
Units V V
A
mJ W °C
R...
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