LM9013H

LM9013G, LM9013H Preferred Devices Amplifier Transistors NPN Silicon Moisture Sensitivity Level: 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 25 25 3.0 1000 Vdc Vdc Vdc mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 1.5 12 –55 to +150 Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, (Note 1.) Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W 1. RqJA is measured with the device soldered into a typical printed circuit board. http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER 1 23 TO–92 CASE 29 STYLE 1 LM90 13x YWW © Semiconductor Components Industries, LLC, 2001 April, 2001 – Rev. 0 LM9013x = Specific Device Code x = G or H Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping LM9013G TO–92 5000 Units/Box LM9013H TO–92 5000 Units/Box Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number: LM9013G/D LM9013G, LM9013H ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter–Ba...