2SA1016

2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS Value 120 100 5 50 100 400 125 -55 to +125 Unit V V V mA mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 OC Parameter DC Current Gain at -VCE=6V, -IC=1mA Current Gain Group F G H Collector Base Breakdown Voltage at -IC=10μA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=80V Emitter Cutoff Current at -VEB=4V Collector Emitter Saturation Voltage at -IC=10mA, -IB=1mA Gain Bandwidth Product at -VCE=6V, -IC=1mA Output Capacitance at -VCB=10V, f=1MHz Noise Level at VCC=30V, IC=1mA Rg=56KΩ,VG=77dB/1kHz Noise Peak Level at VCC=30V, IC=1mA Rg=56KΩ,VG=77dB/1kHz Symbol hFE hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) fT COB CNO(ave) CNO(peak) Min. 160 280 480 120 100 5 - - - Typ. 110 2.2 - - Max. Unit 320 560 960 - -V -V -V 1 μA 1 μA 0.5 V - MHz - pF 35 mV 200 mV Page 2 of 2 7/15/2011 ...