RFUS10TF4S

Super Fast Recovery Diode RFUS10TF4S lSeries Standard Fast Recovery lDimensions (Unit : mm) lApplications General rectification lFeatures 1)Single type.(TO-220) 2)High switching speed RFUS10 TF4S ①② Data Sheet lStructure lConstruction Silicon epitaxial planer ROHM : TO220NFM ① Manufacture Year ② Manufacture Week lAbsolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current VRM VR Io Forward current surge peak IFSM Junction temperature Storage temperature Tj Tstg Conditions Duty≤0.5 60Hz half sin wave, Resistance load, Tc=82°C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Limits 430 430 10 80 150 -55 to +150 Unit V V A A C C lElectrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Thermal resistance Rth(j-c) Conditions IF=10A VR=430V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. － － － － Typ. Max. 1.45 1.7 0.05 10 19 30 －3 Unit V μA ns °C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A RFUS10TF4S 　 Data Sheet FORWARD CURRENT:IF(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Tj=125°C Tj=150°C 10 Tj=25°C 1 Tj=75°C 0.1 0 1000 100 12 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 3 f=1MHz 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 VR=430V Tj=25°C 10 AVE:13.6nA 1 IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOL...