InGaAs PIN photodiode
PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features Applications
l...
Description
PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features Applications
l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm
s Specifications / Absolute maximum ratings
Dim ensional Package outline Active area (mm) φ0.3 φ0.5 φ1 φ3 φ0.3 φ1 φ3 φ0.3 φ1 φ3
l Gas analyzer l Water content analyzer l NIR (Near Infrared) photometry
Type No.
Cooling
Absolute maximum ratings Thermistor TE-cooler Reverse Operating Storage power allowable voltage temperature temperature dissipation Topr current Tstg VR (mW) (A) (V) (°C) (°C)
G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23
➀ ➁ ➂
TO-18 TO-5 TO-8
Non-cooled
-
-
-40 to +85
-55 to +125
One-stage TE-cooled Two-stage TE-cooled
1.5 0.2 1.0
2 -40 to +70 -55 to +85
➃
TO-8
s Electrical and optical characteristics (Typ. unless otherwise noted)
M easurem ent Spectral Peak Photo condition response sensitivity sensitivity Element range w avelen gth S Tem perature λ λp λ=λp T (°C) G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23 25 (µm) 0.9 to 2.1 (µm) (A/W) Dark current ID VR=1 V Typ. Max. (nA) (nA) 55 550 125 1250 500 5000 5 (µA) 50 (µA) 5.5 55 50 500 500 5000 3 30 25 250 250 2500 Cut-off freq uenc y fc VR=1 V RL=50 Ω (MHz) 100 80 40 3 100 40 3 100 40 3 Terminal Shunt capacitance resistance Ct Rsh VR=1 V V R = 10 m V ...
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