A2140

www.DataSheet4U.com Power Transistors 2SA2140 Silicon PNP epitaxial planar type For power amplification For TV VM circuit ■ Features Satisfactory linearity of forward current transfer ratio hFE High transition frequency (fT) Full-pack package which can be installed to the heat sink with one screw. ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Ta = 25°C Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg −180 V −180 V −6 V −1.5 A −3 A 20 W 2.0 DataSheet4U.com 150 °C −55 to +150 °C 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 φ 3.2±0.1 15.0±0.5 13.7±0.2 4.2±0.2 Solder Dip 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 2.54±0.30 5.08±0.50 123 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Internal Connection DataShee C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0 −180 V Collector-base cutoff current (Emitter open) ICBO VCB = −180 V, IE = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 −100 µA Forward current transfer ratio * hFE VCE = −5 V, IC = − 0.1 A 60 240  Collector-emitter saturation voltage VCE(sat) IC = −1 A, IB = − 0.1 A − 0.5 V Transition freq...