Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
...
Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL
TRANSISTOR
CD965
TO-92 Plastic Package
ECB
For Low Frequency Power Amplification
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Collector Current Peak Power Dissipation @ Ta=25ºC Junction Temperature
Storage Temperature Range
SYMBOL VCEO VCBO VEBO IC ICP PC Tj
Tstg
VALUE 20 40 7 5 8 0.75 150
- 55 to +150
UNITS V V V A A W ºC ºC
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Base Voltage
VCBO
IC=100µA, IE=0
Emitter Base Voltage
VEBO
IE=10µA, IC=0
Collector Cut Off Current
ICBO
VCB=10V, IE=0
Emitter Cut Off Current
IEBO
VEB=7V, IC=0
DC Current Gain
hFE *IC=500mA, VCE=2V
IC=2A, VCE=2V
Collector Emitter Saturation Voltage VCE (sat)
IC=3A, IB=100mA
Base Emitter Saturation Voltage
VBE (sat)
IC=1A, IB=25mA
MIN TYP 20 40 7
180 150
MAX
100 100 600 1.35 1.20
UNITS V V V nA nA
V V
DYNAMIC CHARACTERISTICS DESCRIPTION Output Capacitance Transition Frequency
*hFE Classification
SYMBOL TEST CONDITION
MIN TYP
Cob IE=0, VCB=20V, f=1MHz
fT IC=50mA, VCE=6V
150
MAX 50
P : 180 - 270 Q : 230 - 380 R : 340 - 600
UNITS pF MHz
CD965Rev_3 080903E
Continental Device India Limited
Data Sheet
Page 1 of 4
L Dimension With 'L'
Uncontrolled
B
1 2 3 D AA
G FF
KA E
CD965
TO...