ITR8307-L24-F43

ITR8307/L24/F43 Features ․Thin ․Fast response time ․High sensitivity ․Pb free ․High analytic ․Compact Description The ITR8307/L24/F43 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing The phototransistor receives radiation from the IR only .This is the normal situation. But when an object is in between, phototransistor could not receive the radiation. Applications ․Various microcomputer control equipment ․Floppy disk driver ․Cassette type recorder ․Camera ․VCR Device Selection Guide Revi1sion Copy:rig4ht © 2010, Everlight All Rights Reserved. Release Date : June.11.2013. Issue RNoe:DleRaX-s0e00D01a44teR:e2v.0413-06-1w3w1w6.:e5v0e:r5li4g.h0t.com LifecyclePhase: Expired Period: Forever DATASHEET ITR8307/L24/F43 Device No. IR PT Chip Material GaAs Silicon Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Input Power Dissipation at(or below) 25 Free Air Temperature Reverse Voltage Forward Current Peak Forward Current (*1) Pulse width 100 s, Duty cycle=1% Collector Power Dissipation Output Collector Current Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Storage Temperature Lead Soldering Temperature (*2) (1/16 inch form body for 5 seconds) ( 1) tw=100 sec. , T=10 msec. ( 2) Pd VR IF IFP PC IC B VCEO B VECO Topr Tstg Tsol t=5 Sec LENS COLOR Water Clear Water Clear Ratings 75 6 50 1 100 20 35 6 -25~+85 -30~+90 260 Unit mW V mA A mW...