D2120

Ordering number:EN3239 NPN Epitaxial Planar Silicon Transistor 2SD2120 General Driver Applications Features · Darlington connection (Contains bias resistance, damper diode). · High DC current gain. · Less dependence of DC current gain on temperature. Package Dimensions unit:mm 2064A [2SD2120] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.54 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO VCB=60V, IE=0 VEB=5V, IC=0 VCE=3V, IC=500mA VCE=3V, IC=1A IC=1A, IB=2mA IC=1A, IB=2mA IC=100µA, IE=0 IC=10mA, RBE=∞ 1.0 0.6 0.5 23 2.54 0.45 1 : Emitter 2 : Collector 3 : Base SANYO : NMP Ratings 100 80 6 2 4 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 1000 2000 100 80 7000 1.0 1.6 max 10 2.5 30000 1.5 2.0 Unit µA mA V V V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of...