2SC3199

ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25? ) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IE Ptot Tj TS G S P FORM A IS AVAILABLE Value 50 50 5 150 -150 400 125 -55 to +125 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru ® ST 2SC3199 Characteristics at Tamb=25 OC DC Current Gain at VCE=6V, IC=2mA Current Gain Group O Y G L Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=50V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IC=1mA Collector Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA at f=1KHz, RG=10KΩ Symbol hFE hFE hFE hFE VCE(sat) ICBO IEBO fT COB NF Min. 70 120 200 350 80 - - G S P FORM A IS AVAILABLE Typ. 0.1 2 1 Max. 140 240 400 700 0.25 0.1 0.1 3.5 10 Unit V µA µA MHz pF dB SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany ® listed on the Hong Kong Stock Exchange, Stock Code: 724) Date...