2SC3199

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC3199 TRANSISTOR (NPN) FEATURES z High Current Capability z High DC Current Gain z Small Package TO – 92 1. EMITTER 2. COLLECTOR 3. BASE APPLICATIONS z Audio Amplifier Applications z AM Amplifier Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO BDTICIC Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Value 50 50 5 0.15 Unit V V V A PC Collector Power Dissipation 400 mW RθJA Thermal Resistance From Junction To Ambient 312 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Cob fT Test conditions IC= 0.1mA,IE=0 IC=1mA,IB=0 IE=0.1mA,IC=0 VCB=50V,IE=0 VEB=5V,IC=0 VCE=6V, IC=2mA IC=100mA,IB=10mA VCB=10V,IE=0, f=1MHz VCE=10V,IC=1mA Min Typ Max Unit 50 V 50 V 5V 0.1 μA 0.1 μA 70 700 0.25 V 3.5 pF 80 MHz CLASSIFICATION OF hFE RANK O RANGE 70-140 Y 120-240 GR 200-400 BL 300-700 www.BDTIC.com/jcst A,Dec,2010 ...