CS540B8

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS540B8 N-Channel MOSFET Applications: Automotive DC Motor Control Class D Amplifier Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE CS540B8 TO-220 BRAND CS540B8 Pb VDSS 100V Lead Free Package and Finish H F Halogen Free RDS(on)(Max) ID 48mΩ 33A D G D S TO-220 Not to Scale G S Absolute Maximum Ratings Tc= 25℃ unless otherwise specified Symbol Parameter VDSS Drain-to-Source Voltage (NOTE *1) ID ID@ 100 ℃ Continuous Drain Current Continuous Drain Current Maximum 100 33 Figure 3 IDM Pulsed Drain Current, VGS@ 10V Power Dissipation PD Derading Factor above 25 ℃ VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy L=1.3 mH, ID=20 Amps IAS Pulsed Avalanche Rating (NOTE *2) 110 128 0.86 ±20 260 Figure 8 dv/dt Peak Diode Recovery dv/dt (NOTE *3) 3.0 TL TPKG Maximum Temperature for Soldering Leads at 0.063in(1.6mm) from Case for 10 seconds Package Body for 10 seconds 300 260 TJ and TSTG Operation Junction and Storage Temperature Range -55 to 175 *Drain Current limited by Maximum Junction Temperature Caution: Stresses greater than those listed in “Absolute Maximum Ratings” Table may cause permanent damage to the device. Units V A W W/ ℃ V mJ A V/ns ℃ ℃ Thermal Resistance Symbol Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Maximum 1...