Document
FTP02N60C FTA02N60C
N-Channel MOSFET
Pb Lead Free Package and Finish
Applications:
• Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power
Features:
• RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve
Ordering Information
PART NUMBER FTP02N60C FTA02N60C
PACKAGE TO-220 TO-220F
BRAND FTP02N60C FTA02N60C
VDSS 600 V
RDS(ON) (Max.) 4.4Ω
ID 2A
D
GDS
TO-220 G DS
TO-220F
Packages Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP02N60C FTA02N60C
Units
VDSS ID ID@ 100 oC IDM
PD
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 oC
(NOTE *1) (NOTE *2)
600 2.0 2.0*
Figure 3 Figure 6 70 22 0.37 0.19
V
A
W W/ oC
VGS
EAS
IAS dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy L=10 mH, ID=2.67 Amps Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30 23
Figure 8 3.0
V mJ
A V/ ns
TL TPKG TJ and TSTG
Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 seconds Package Body for 10 seconds
Operating Junction and Storage Temperature Range
300 260
-55 to 150
oC
* Drain Current Limited by Maximum Junction Temperature Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC RθJA
Junction-to-Case Junction-to-Ambient
FTP02N60C FTA02N60C 1.78 5.6 62 100
Units oC/W
Test Conditions Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150 oC. 1 cubic foot chamber, free air.
©2007 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTP02N60C/FTA10N60C REV. A. Oct. 2007
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS ΔBVDSS/Δ TJ
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature Coefficient, Figure 11.
600 --- 0.631
Max. --
--
-- -- 25 IDSS Drain-to-Source Leakage Current
-- -- 25
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
-- -- 100 -- -- -100
Units V
V/ oC
µA
nA
Test Conditions VGS=0V, ID=250µA Reference to 25 oC,
ID=250 µA
VDS=600V, VGS=0V
VDS=480V, VGS=0V TJ=125 oC VGS=+30 V VGS= -30V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON) VGS(TH)
Static Drain-to-Source On-Resistance Figure 9 and 10. Gate Threshold Voltage, Figure 12.
-2.0
3.8 --
gfs Forward Transconductance
-- 1.63
Max. 4.4 4.0 --
Units Ω V S
Test Conditions
VGS=10V, ID=1.2A (NOTE *4)
VDS=VGS, ID=250μA VDS=15V, ID=2A (NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol Ciss Coss
Crss
Parameter Input Capacitance Output Capacitance
Reverse Transfer Capacitance
Min. ---
--
Typ. 298 20
4.8
Max. ---
--
Units pF
Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain (“Miller”) Charge
-- 7.8 --- 2.0 --- 5.3 --
nC
Test Conditions
VGS=0 V VDS=25 V f =1.0MHz Figure 14
VDD=300V ID=2A
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON) trise td(OFF) tfall
Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 10 --- 15 --- 21 --- 17 --
ns
VDD=300V ID=2A
VGS=10 V RG=9.1 Ω
©2007 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTP02N60C/FTA10N60C REV. A. Oct. 2007
Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode)
--
--
2
A
ISM
Maximum Pulsed Current (Body Diode)
-- -- 8
A
VSD Diode Forward Voltage
-- -- 1.5 V
trr Reverse Recovery Time
-- 131 198
ns
Qrr Reverse Recovery Charge
-- 454 680
nC
Test Conditions
Integral pn-diode in MOSFET
IS=2A, VGS=0V VGS=0 V
IF=2A, di/dt=100 A/µs
Notes:
*1. TJ = +25 oC to +150 oC. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD= 2 A, di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC. *4. Pulse width < 380µs; duty cycle < 2%.
©2007 InPower Semiconductor Co., Ltd.
Page 3 of 9
FTP02N60C/FTA10N60C REV. A. Oct. 2007
ZθJC, Thermal Impedance (Normalized)
PD, Power Dissipation (W)
Duty Factor 1.000 50%
20% 0.100 10%
5%
2% 0.010 1%
0.001
single pulse
0.0001 1E-6
10E-6
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
100E-6
1E-3
10E-3
tp, Rectangular Pulse Duration (s)
100E-3
PDM
t1 t2
NOTES: DUTY FACTOR: D=t1/t2 PEAK TJ=PDM x ZθJC x RθJC+TC
1E+0
10E+0
Figure 2. Maximum Power Dissipation vs Case Temperature
75
60
45
30
15
0 25
50 75 100 125
TC, Case Temperature (oC)
150
Figure 4. Typical Output Characteristics
4 PULSE DURATION = 250 µS DUTY FACTOR = 0.5% MAX, TC = 25 oC
3
2
VGS = 15V VGS = 7.0V VGS = 6.5V
VGS = 6.0V
1 VGS = 5.5V
VGS = 5.0V
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
RDS(ON), Drain-to-Source ON Resistance (Ω)
I.