600V N-Channel MOSFET
600V N-Channel MOSFET
General Features
¾ Low ON Resistance ¾ Low Gate Charge (typical 8.9nC) ¾ Fast Switching ¾ 100% Ava...
Description
600V N-Channel MOSFET
General Features
¾ Low ON Resistance ¾ Low Gate Charge (typical 8.9nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ RoHS Compliant/Lead Free
FTP02N60/FTA02N60
BVDSS 600V
RDS(ON) (Max.) 4.4Ω
ID 2.2A
Applications
¾ High Efficiency SMPS
¾ Adaptor/Charger ¾ Active PFC ¾ LCD Panel Power
Ordering Information
Part Number Package
FTP02N60
TO-220
FTA02N60
TO-220F
Marking
FTP02N60 FTA02N60
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol VDSS ID
ID@100℃ IDM
PD
VGS
EAS
dv/dt
TL
Parameter
Drain-to-Source Voltage[1] Continuous Drain Current
Continuous Drain Current Pulsed Drain Current, VGS@10V[2] Power Dissipation Derating Factor above 25℃
Gate-to-Source Voltage
Single Pulse Avalanche Energy L=30mH, ID=2.2A Peak Diode Recovery dv/dt[3]
Soldering Temperature Distance of 1.6mm from case for 10 seconds
TJ and TSTG Operating and Storage Temperature Range
FTP02N60
FTA02N60
600 2.2 2.2*
Figure 3
Figure 6 54 21 0.43 0.17
±30
72
4.5
300
-55 to 150
Unit V
A
W W/℃
V mJ V/ns
℃
*Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol RθJC
RθJA
Parameter Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FTP02N60 2.3
65
FTA02N60 6.0
65
Unit ℃/W
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o. c o m 1/11
Rev. 2.0 Mar. 2009
Electrical Characteristic...
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