FTA02N60

600V N-Channel MOSFET General Features ¾ Low ON Resistance ¾ Low Gate Charge (typical 8.9nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ RoHS Compliant/Lead Free FTP02N60/FTA02N60 BVDSS 600V RDS(ON) (Max.) 4.4Ω ID 2.2A Applications ¾ High Efficiency SMPS ¾ Adaptor/Charger ¾ Active PFC ¾ LCD Panel Power Ordering Information Part Number Package FTP02N60 TO-220 FTA02N60 TO-220F Marking FTP02N60 FTA02N60 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS ID ID@100℃ IDM PD VGS EAS dv/dt TL Parameter Drain-to-Source Voltage[1] Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@10V[2] Power Dissipation Derating Factor above 25℃ Gate-to-Source Voltage Single Pulse Avalanche Energy L=30mH, ID=2.2A Peak Diode Recovery dv/dt[3] Soldering Temperature Distance of 1.6mm from case for 10 seconds TJ and TSTG Operating and Storage Temperature Range FTP02N60 FTA02N60 600 2.2 2.2* Figure 3 Figure 6 54 21 0.43 0.17 ±30 72 4.5 300 -55 to 150 Unit V A W W/℃ V mJ V/ns ℃ *Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FTP02N60 2.3 65 FTA02N60 6.0 65 Unit ℃/W ARK Microelectronics Co., Ltd. w w w. a r k - m i c r o. c o m 1/11 Rev. 2.0 Mar. 2009 Electrical Characteristic...