Document
FTP04N60D FTA04N60D
N-Channel MOSFET
Pb Lead Free Package and Finish
Applications:
• Adaptor • Charger • SMPS Standby Power
Features:
• RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves
Ordering Information
PART NUMBER FTP04N60D FTA04N60D
PACKAGE TO-220 TO-220F
BRAND FTP04N60D FTA04N60D
VDSS 600 V
RDS(ON) (Max.) 2.2 :
ID 4.0 A
D
GDS
G
TO-220
DS
TO-220F
Packages Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP04N60D FTA04N60D
Units
VDSS ID ID@ 100 oC IDM
PD
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 oC
(NOTE *1) (NOTE *2)
600
4.0 4.0*
Figure 3
Figure 6
75 28
0.59
0.22
V
A
W W/ oC
VGS EAS
IAS dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy L=10 mH, ID=4.0 Amps Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30 245 Figure 8 5.0
V mJ A V/ ns
TL TPKG
TJ and TSTG
Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 seconds Package Body for 10 seconds
Operating Junction and Storage Temperature Range
300 260
-55 to 150
oC
* Drain Current Limited by Maximum Junction Temperature Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device
Thermal Resistance
Symbol
Parameter
FTP04N60D FTA04N60D
RTJC RTJA
Junction-to-Case Junction-to-Ambient
1.7 62
4.5 100
Units
Test Conditions
oC/W
Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150 oC. 1 cubic foot chamber, free air.
©2010 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTP04N60D/FTA04N60D REV. C. Jun. 2010
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature 'BVDSS/' TJ Coefficient, Figure 11.
600 --- 0.77
Max. --
--
-- -- 25
IDSS Drain-to-Source Leakage Current -- -- 250
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
-- -- 100 -- -- -100
Units V
V/ oC
μA
nA
Test Conditions VGS=0V, ID=250μA Reference to 25 oC,
ID=250 μA
VDS=600V, VGS=0V
VDS=480V, VGS=0V TJ=125 oC VGS=+30 V VGS= -30V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON) VGS(TH)
Static Drain-to-Source On-Resistance Figure 9 and 10.
Gate Threshold Voltage, Figure 12.
-2.0
1.9 --
gfs Forward Transconductance
-- 3.75
Max. 2.2 4.0 --
Units : V S
Test Conditions
VGS=10V, ID=2.4A (NOTE *4)
VDS=VGS, ID=250PA VDS=15V, ID=4A (NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol Ciss Coss
Crss
Parameter Input Capacitance Output Capacitance
Reverse Transfer Capacitance
Min. ---
--
Typ. 556 58
6.5
Max. ---
--
Units pF
Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain (“Miller”) Charge
-- --- --- --
nC
Test Conditions
VGS=0 V VDS=25 V f =1.0MHz Figure 14
VDD=300V ID=4A,Vgs=10V
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON) trise td(OFF) tfall
Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 10 --- 9.8 --- 39 --- 27 --
ns
VDD=300V ID=4A
VGS=10 V RG=9.1 :
©2010 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTP04N60D/FTA04N60D REV. C. Jun. 2010
Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode)
--
--
4
A
ISM
Maximum Pulsed Current (Body Diode)
-- -- 16
A
VSD Diode Forward Voltage
-- -- 1.5 V
trr Reverse Recovery Time
-- 89 133 ns
Qrr Reverse Recovery Charge
-- 267 400 nC
Test Conditions
Integral pn-diode in MOSFET
IS=4A, VGS=0V VGS=0 V
IF=4A, di/dt=100 A/μs
Notes:
*1. TJ = +25 oC to +150 oC. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD= 4A di/dt < 100 A/μs, VDD < BVDSS, TJ=+150 oC. *4. Pulse width < 380μs; duty cycle < 2%.
©2010 InPower Semiconductor Co., Ltd.
Page 3 of 9
FTP04N60D/FTA04N60D REV. C. Jun. 2010
ZTJC, Thermal Impedance (Normalized)
PD, Power Dissipation (W)
Duty Factor 1.000
50% 20% 10% 0.100 5%
2% 0.010 1%
0.001
single pulse
0.0001 1E-6
10E-6
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
100E-6
1E-3
10E-3
tp, Rectangular Pulse Duration (s)
100E-3
PDM
t1 t2
NOTES: DUTY FACTOR: D=t1/t2 PEAK TJ=PDM x ZTJC x RTJC+TC
1E+0
10E+0
Figure 2. Maximum Power Dissipation vs Case Temperature
80
60
40
20
0.0 25
50 75 100 125
TC, Case Temperature (oC)
150
Figure 4. Typical Output Characteristics
10 PULSE DURATION = 250 μS DUTY FACTOR = 0.5% MAX, TC = 25 oC
7.5
5.0
VGS = 15V VGS = 7.0V VGS = 6.5V
VGS = 6.0V
2.5
0.0 0
VGS = 5.5V VGS = 5.0V
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
30
RDS(O.