FTA10N60G

600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 54nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  Adaptor/Charger  Active PFC  LCD Panel Power FTP10N60/FTA10N60 BVDSS 600V RDS(ON) (Max.) 0.75Ω ID 10.0A Ordering Information Part Number Package FTP10N60 TO-220 FTP10N60G TO-220 FTA10N60 TO-220F FTA10N60G TO-220F FTA10N60Z TO-220FG FTA10N60GZ TO-220FG Marking FTP10N60 FTP10N60G FTA10N60 FTA10N60G FTA10N60Z FTA10N60GZ Remark RoHS Halogen-free RoHS Halogen-free RoHS Halogen-free Absolute Maximum Ratings Symbol Parameter VDSS Drain-to-Source Voltage[1] ID Continuous Drain Current ID@100℃ Continuous Drain Current IDM Pulsed Drain Current, VGS@10V[2] Power Dissipation PD Derating Factor above 25℃ TC=25℃ unless otherwise specified FTP10N60 FTA10N60 Unit 600 V 10.0 10.0* Figure 3 A Figure 6 156 50 W 1.25 0.4 W/℃ VGS EAS dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy L=12mH, ID=10A Peak Diode Recovery dv/dt[3] ±30 V 600 mJ 4.5 V/ns TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ and TSTG Operating and Storage Temperature Range -55 to 150 *Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. ℃ ARK Microelectronics Co., Ltd. w w w. a r k - m i c r o . c o m 1 / 11 Re...