Document
R SEMICONDUCTOR
1N4727 THRU 1N4764
1W SILICON PLANAR ZENER DIODES
FEATURES
DO-41(GLASS)
Silicon planar power zener diode For use in stabilizing and clipping circuits with high power rating. Standard Zener voltage tolerance is 10%. Add suffix "A" for 5% tolerance and suffix"B"for 2%tolerance. Other tolerance is available upon request. High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
JF
0.107(2.7) 0.080(2.0)
DIA.
1.00(25.4) MIN.
0.205(5.20) 0.161(4.10)
MECHANICAL DATA
Case: DO-41 glass case Weight: Approx. 0.35 gram
0.034(0.86) MAX DIA.
1.00(25.4) MIN.
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C)
Symbols
Zener current see table "Characteristics"
Power dissipation at TA=25 C
Ptot
Junction temperature
TJ
Storage temperature range
TSTG
1) Valid provided that a distance of 8mm from case is kept at ambient temperature
Value
11) 200 -65 to+200
Units
W
C C
ELECTRICAL CHARACTERISTICS (TA=25 C)
Symbols
Min
Thermal resistance junction to ambient
R JA
Forward voltage at IF=200mA
VF
1) Valid provided that a distance of 8mm from case is kept at ambient temperature.
Typ Max Units
1701) 1.2
K /W V
JINAN JINGHENG ELECTRONICS CO., LTD.
10-12
HTTP://WWW.JINGHENGGROUP.COM
1N4727 ...1N4764 SILICON PLANAR ZENER DIODES
Type
1N4727 1N4728 1N4729 1N4730 1N4731 1N4732 1N4733 1N4734 1N4735 1N4736 1N4737 1N4738 1N4739 1N4740 1N4741 1N4742 1N4743 1N4744 1N4745 1N4746 1N4747 1N4748 1N4749 1N4750 1N4751 1N4752 1N4753 1N4754 1N4755 1N4756 1N4757 1N4758 1N4759 1N4760 1N4761 1N4762 1N4763 1N4764
Nominal Zener Voltage 1)
at IZT VZ V
3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100
Test Current
IZT mA
83 76 69 64 58 53 49 45 41 37 34 31 28 25 23 21 19 17 15.5 14 12.5 11.5 10.5 9.5 8.5 7.5 7 6.5 6 5.5 5 4.5 4 3.7 3.3 3 2.8 2.5
Maximum Zener Impedance 2)
at IZT
ZZT
10 10 10 9 9 8 7 5 2 3.5 4 4.5 5 7 8 9 10 14 16 20 22 23 25 35 40 45 50 60 70 80 95 110 125 150 175 200 250 350
ZZK
400 400 400 400 400 500 550 600 700 700 700 700 700 700 700 700 700 700 700 750 750 750 750 750 1,000 1,000 1,000 1,000 1,500 1,500 1,500 2,000 2,000 2,000 2,000 3,000 3,000 3,000
at IZK mA
1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
Maximum reverse leakage current
IR at VR AV
150 1 150 1 100 1 100 1 50 1 10 1 10 1 10 2 10 3 10 4 10 5 10 6 10 7 10 7.6
5 8.4 5 9.1 5 9.9 5 11.4 5 12.2 5 13.7 5 15.2 5 16.7 5 18.2 5 20.6 5 22.8 5 25.1 5 27.4 5 29.7 5 32.7 5 35.8 5 38.8 5 42.6 5 47.1 5 51.7 5 56 5 62.2 5 69.2 5 76
Surge current 3)
at TA=25℃ IR mA
1,375 1,375 1,260 1,190 1,070 970 890 810 730 660 605 550 500 454 414 380 344 304 285 250 225 205 190 170 150 135 125
115 110 95 90 80 70 65 60 55 50 45
Maximum regulator Current 4)
IZM mA
275 275 252 234 217 193 178 162 146 133 121 110 100 91 83 76 69 61 57 50 45 41 38 34 30 27 25 23 22 19 18 16 14 13 12 11 10
9
Notes: 1) The Zener impedance is derived from the 1KHz AC voltage which results when an AC current having an RMS value equal to 10% of the Zener current (IZT or IZK) is
superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve and to eliminate unstable units. 2) Valid provided that electrodes at a distance of 10mm from case are kept at ambient temperature.
3) Measured under thermal equilibrium and DC test conditions. 4)The rating listed in the electrical characteristics table is maximum peak,non-repetitive,reverse surge current of ½ square wave or equivalent sine wave pulse
of 1/120 second duration superimposed on the test current Izt. 5)Tested with pulses tp=20ms.
JINAN JINGHENG ELECTRONICS CO., LTD.
10-13
HTTP://WWW.JINGHENGGROUP.COM
1N4727 ...1N4764 SILICON PLANAR ZENER DIODES
Breakdowm characteristics
T j=constant(pulsed)
mA 100
90 80
70 Iz 60
50 40 30 20 10
0 0 12 3
4
IN 4727 IN 47 28 IN 4730 IN 47 29 IN 4731
IN 4732 IN 4733 IN 4734 IN 4735
56 78 Vz
IN 4736
IN 4737 IN 4738 IN 4739 IN 4740 IN 4741
IN... T j=25 o C
9 10 11 12
IN 4746
IN 4744
IN 4743
mA 50 40
Iz 30
20 10
0 0
IN 4742
IN 4745
IN 4747
IN 4748
IN 4749
IN 4750 IN 4751 IN 4752
IN 4753 IN 4754
IN 4755 IN 4756
10 20 30 40 50 60 70 80 Vz
IN 4757
IN 4758
IN 4759
IN 4760
IN 4761 IN 4762
IN 4763 IN 4764
IN... T j=25 o C
90 100 110 120
JINAN JINGHENG ELECTRONICS CO., LTD.
10-14
HTTP://WWW.JINGHENGGROUP.COM
1N4727 ...1N4764 SILICON PLANAR ZENER DIODES
FIG.1-POWER DISSIPATION VS AMBIENT TEMPERATURE
FIG.2-TYPICAL THERMAL RESISTANCE VS LEAD LENGTH
1.0 250
Pd. Total Power Dissipation (w)
0.8 200
0.6
0.4
0.2
0 0 100 200
TA , Ambient temperature
150
100
50
0 0 5 10 15 20 25 30
L, Lead Length (mm)
FIG.3-JUNCTION CAPACITANCE VS ZENER VOLTAGE
1000
f=1MHz T A =25°C
100
V R =0V
V R =2V V R =5V V R =20V 10 V R =30V
FIG..