Document
LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
zApplictions Low current rectification and high speed switching
zFeatures
Extremelysmall surface mounting type. (SOD523) IO=200mA guaranteed despite the size. Low VF.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zConstruction
Silicon epitaxial planar
z We declare that the material of product compliance with RoHS requirements.
Ordering Information
Device
LRB521S-40T1G S-LRB521S-40T1G LRB521S-40T3G S-LRB521S-40T3G
Marking S S
Shipping 3000/Tape&Reel 10000/Tape&Reel
LRB521S-40T1G S-LRB521S-40T1G
1
2
SOD-523
1 Cathode
2 Anode
MAXIMUM RATINGS (TA = 25°C) Parameter
DC reverse voltage Mean rectifying current Peak forward surge current* Junction temperature Storage temperature
*60Hz for 1
Symbol VR IO IFSM Tj Tstg
Limits 40 200 4 125
-55~+125
Unit V mA A °C °C
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol
Forward voltage Forward voltage
VF VF
Forward voltage
VF
Reverse current
IR
Reverse current
IR
ESD break down voltage
ESD
Min. 0.16 0.31 0.37 -
8
Max. 0.30 0.45 0.52 20 90
-
Unit V V V µΑ µΑ
KV
Conditions I F=10mA I F=100mA IF=200mA VR=10V VR=40V
C=100pF,R=1.5K Ω forward and reverse:1 time
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LRB521S-40T1G , S-LRB521S-40T1G
zElectrical characteristic curves
FORWARD CURRENT:IF(mA)
1000
Ta=75℃ 100 Ta=125℃
Ta=150℃
10
Ta=-25℃ Ta=25℃
1 0 100 200 300 400 500 600
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
REVERSE CURRENT:IR(uA)
100000 10000 1000 100 10 1 0.1 0.01 0
Ta=150℃ Ta=125℃ Ta=75℃
Ta=25℃
Ta=-25℃
10 20
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
30
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100 f=1MHz
10
1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
100
520
Ta=25℃
90
IF=200mA
80
510
n=30pcs
70
REVERSE CURRENT:VR(uA)
60 500 50
490 AVE:495.2mV
480
40 30 20 10
0 470
VF DISPERSION MAP
Ta=25℃ VR=40V n=30pcs
AVE:6.86uA
IR DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
30
29
Ta=25℃ f=1MHz
28 VR=0V
27 n=10pcs
26 25 AVE:27.2pF
24
23
22
21
20
Ct DISPERSION MAP
PEAK SURGE FORWARD CURRENT:IFSM(A)
20 Ifsm 1cyc
15 8.3ms
10
5 AVE:5.60A
0
IFSM DISPERSION MAP
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
10 10
Ifsm
8.3ms 8.3ms 1cyc
55
Ifsm t
0 1 10 100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
0 1 10 100
TIME:t(ms) IFSM-t CHARACTERISTICS
1000
Rth(j-a)
Rth(j-c)
100 Mounted on epoxy board
IM=1mA
IF=20mA
10 0.001
1ms time 300us
0.1 10 TIME:(s)
Rth-t CHARACTERISTICS
1000
FORWARD POWER DISSIPATION:Pf(W)
0.3 0.25 D=1/2
0.2 0.15 Sin(θ=180)
DC
0.1
0.05
0
0 0.1 0.2 0.3
AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
0.4
REVERSE POWER DISSIPATIONPR (w)
5
4
3 D=1/2
2 DC Sin(θ=180)
1
0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
Rev.O 2/4
LESHAN RADIO COMPANY, LTD. LRB521S-40T1G , S-LRB521S-40T1G
0.5 0.4 DC 0.3 0.2
0A Io
0V t
VR D=t/T
VR=20V
T Tj=150℃
Sin(θ=180)
0.1 D=1/2
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta)
0.5
0.4 DC
0.3 D=1/2
0.2
0A Io
0V t
VR D=t/T
VR=20V
T Tj=150℃
0.1 Sin(θ=180)
0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc)
AVERAGE RECTIFIED FORWARD CURRENT Io(A)
AVERAGE RECTIFIED FORWARD CURRENT Io(A)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD. LRB521S-40T1G , S-LRB521S-40T1G
SOD -523
−X− D
−Y−
2X b 0.08 M
1
XY TOP VIEW
2
E
A
c HE SIDE VIEW
RECOMMENDED SOLDERING FOOTPRINT*
2X
0.48
1.80
2X
0.40
PACKAGE OUTLINE
DIMENSION: MILLIMETERS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
MILLIMETERS DIM MIN NOM MAX A 0.50 0.60 0.70
b 0.25 0.30 0.35 c 0.07 0.14 0.20 D 1.10 1.20 1.30 E 0.70 0.80 0.90 H E 1.50 1.60 1.70 L 0.30 REF L2 0.15 0.20 0.25
Rev.O 4/4
.