NexFET Power MOSFETs
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16407Q5
Features
• Ultra Low Qg & Qgd • Low Thermal Resistance • Avalanche R...
Description
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16407Q5
Features
Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating
G
S S S
D D D
D
S1 S2 S3 G4
D
8D 7D 6D 5D
RoHS Compliant
Halogen Free
QFN 5mm x 6mm Plastic Package
Top View
Product Summary
VDS Qg Qgd
RDS(on)
Vth
25 13.3 3.5 VGS=4.5V VGS=10V 1.6
2.5 1.8
V nC nC mΩ mΩ V
Maximum Values (TA=25oC unless otherwise stated)
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Continuous Drain Current, TC = 25°C
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =66A, L = 0.1mH, RG = 25Ω
1. Rθja = 400C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB. 2. Pulse width ≤300 µs, duty cycle ≤ 2%
RDS(ON) vs. VGS
6
ID = 25A 5
Gate Charge
12
VDS = 12.5V 10 ID = 25A
4
TC = 125ºC
8
TC = 25ºC
36
Value
25 +16 / -12
100 31 200 3.1 -55 to 150 218
Units
V V A A A W °C mJ
RDS(on) - On Resistance (m Ω ) VGS - Gate Voltage (V)
24
12
0 0 2 4 6 8 10 12 VGS - Gate to Source Voltage (V)
0
0 5 10 15 20 25 30 35 Qg - Gate Charge (nC)
Ordering Information
Type
CSD16407Q5
Package
QFN 5X6 Plastic Package
© 2008 CICLON Semiconductor Device Corp., rev 2.4 All rights reserved.
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16407Q5
Electrical Characteristics (TA ...
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