CSD16414Q5

N-Channel CICLON NexFET™ Power MOSFETs CSD16414Q5 Features  Ultra Low Qg & Qgd  Low Thermal Resistance  Avalanche Rated  Pb Free Terminal Plating G S S S D D D D S1 S2 S3 G4 D 8D 7D 6D 5D  RoHS Compliant  Halogen Free QFN 5mm x 6mm Plastic Package Top View Product Summary VDS Qg Qgd RDS(on) Vth 25 16.6 4.4 VGS=4.5V VGS=10V 1.6 2.1 1.5 V nC nC m m V Maximum Values (TA=25oC unless otherwise stated) Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current1 IDM Pulsed Drain Current, TA = 25°C2 PD Power Dissipation1 TJ, TSTG Operating Junction and Storage Temperature Range EAS Avalanche Energy, single pulse ID =100A, L = 0.1mH, RG = 25Ω 1. RθJA = 390C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB. 2. See Figure 10 RDS(ON) vs. VGS 6.0 5.0 ID = 30A Gate Charge 12 VDS = 12.5V 10 ID = 30A 4.0 8 TC = 125ºC 3.0 TC = 25ºC 6 2.0 4 Value 25 +16 / -12 100 34 213 3.2 -55 to 150 500 Units V V A A A W °C mJ RDS(on) - On Resistance (m  ) V GS - Gate Voltage (V) 1.0 2 0.0 0 2 4 6 8 10 VGS - Gate to Source Voltage (V) 12 Ordering Information Type CSD16414Q5 Package QFN 5X6 Plastic Package © 2009 CICLON Semiconductor Device Corp., rev 2.1 All rights reserved. 0 0 5 10 15 20 25 30 35 40 Qg - Gate Charge (nC) Package Media 13 inch reel Qty 2500 Ship Tape and Reel www.ciclonsemi.com N-Channel CICLON NexFET™ Power MOSFETs CSD16414Q5 Electrical Characteristics (...