CSD16401Q5

N-Channel CICLON NexFET™ Power MOSFETs CSD16401Q5 Features Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating G S S S D D D D S1 S2 S3 G4 D 8D 7D 6D 5D RoHS Compliant Halogen Free QFN 5mm x 6mm Plastic Package Top View Product Summary VDS Qg Qgd RDS(on) Vth 25 21 5.2 VGS=4.5V VGS=10V 1.5 1.8 1.3 V nC nC mΩ mΩ V Maximum Values (TA=25oC unless otherwise stated) Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current1 IDM Pulsed Drain Current, TA = 25°C2 PD Power Dissipation1 TJ, TSTG Operating Junction and Storage Temperature Range EAS Avalanche Energy, single pulse ID =100A, L = 0.1mH, RG = 25Ω 1. Rθja = 400C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB. 2. Pulse width ≤300 µs, duty cycle ≤ 2% RDS(ON) vs. VGS 6.0 5.0 ID = 40A Gate Charge 12 10 4.0 8 Value 25 +16 / -12 100 38 240 3.1 -55 to 150 500 Units V V A A A W °C mJ RDS(on) - On Resistance (m Ω ) Gate Voltage (V) 3.0 2.0 1.0 0.0 0 TC = 125ºC TC = 25ºC 2 4 6 8 10 VGS - Gate to Source Voltage (V) 12 6 4 2 VDS = 12.5V ID = 40A 0 0 10 20 30 40 50 60 Qg - Gate Charge (nC) Ordering Information Type CSD16401Q5 Package QFN 5X6 Plastic Package © 2008 CICLON Semiconductor Device Corp., rev 2.5 All rights reserved. Package Media 13 inch reel Qty 2500 Ship Tape and Reel www.ciclonsemi.com N-Channel CICLON NexFET™ Power MOSFETs CSD16401Q5 Electrical Characteristi...