NexFET Power MOSFETs
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16401Q5
Features
• Ultra Low Qg & Qgd • Low Thermal Resistance • Avalanche R...
Description
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16401Q5
Features
Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating
G
S S S
D D D
D
S1 S2 S3 G4
D
8D 7D 6D 5D
RoHS Compliant
Halogen Free
QFN 5mm x 6mm Plastic Package
Top View
Product Summary
VDS Qg Qgd
RDS(on)
Vth
25 21 5.2 VGS=4.5V VGS=10V 1.5
1.8 1.3
V nC nC mΩ mΩ V
Maximum Values (TA=25oC unless otherwise stated)
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Continuous Drain Current, TC = 25°C
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =100A, L = 0.1mH, RG = 25Ω
1. Rθja = 400C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB. 2. Pulse width ≤300 µs, duty cycle ≤ 2%
RDS(ON) vs. VGS
6.0
5.0
ID = 40A
Gate Charge
12
10
4.0 8
Value
25 +16 / -12
100 38 240 3.1 -55 to 150 500
Units
V V A A A W °C mJ
RDS(on) - On Resistance (m Ω ) Gate Voltage (V)
3.0
2.0
1.0
0.0 0
TC = 125ºC TC = 25ºC
2 4 6 8 10 VGS - Gate to Source Voltage (V)
12
6
4
2 VDS = 12.5V ID = 40A
0 0 10 20 30 40 50 60 Qg - Gate Charge (nC)
Ordering Information
Type
CSD16401Q5
Package
QFN 5X6 Plastic Package
© 2008 CICLON Semiconductor Device Corp., rev 2.5 All rights reserved.
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com
N-Channel
CICLON NexFET™ Power MOSFETs
CSD16401Q5
Electrical Characteristi...
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