Document
SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W
Technical Data
…designed for Low Frequency Power Amplifier.
F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package
MAXIMUM RATINGS
Rating
Symbol
Value
Collector- Emitter Voltage
Collector – Base Voltage Emitter Base Voltage Collector Current – Continuos
Base Current
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
V CEO
V CB V EB
IC
IB
PD
Tj,Tstg
60
60 7 3
0.3
30 0.24 -55 to +150
Symbol
Max.
Unit
Vdc Vdc Vdc Adc Adc Watts W/°C °C
Unit
Thermal resistance junction to case
R thjc
4.16 °C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic
Symbol Min Typ Max Unit
* OFF CHARACTERISTICS : Collector–Emitter Breakdown [ Ic =50 mAdc, IB = 0 ] Collector Cutoff Current [ VCB = 60 Vdc, IB = 0 ]
Voltage VCEO(sus) ICB0
60
Collector–Base Breakdown [ Ic =1mAdc, IE = 0 ] Emitter Cutoff Current [VEB=7Vdc, IC=0]
Voltage BVCBO IEBO
60
* ON CHARACTERISTICS (1):
DC Current Gain [ Ic = 0.5 Adc , VCE = 5.0 Vdc ] [ Ic =3 Adc , VCE =5.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 3Adc , IB = 0.3Adc )
Emitter–Base Saturation [ Ic =0.5Adc, VCE =5V ]
Voltage
hFE
VCE(sat) VBE(ON)
100 20
Vdc 100 µAdc
Vdc 100 µAdc
200
1 Vdc 1
Vdc
DYNAMIC CHARACTERISTICS : Current Gain – Bandwidth Product [Ic=0.5Adc,VCE=5Vdc,ftest=1.0 MHz ] Collector Output Capacitance VCB=10V,IE=0,f=1MHz
fT COB
3 70
MHz pF
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
.