SL03N06

Features ♦Low On-Resistance ♦Fast Switching ♦High Effective ♦Lead-Free, RoHS Compliant SL03N06 60V/3A N-Channel Advanced Power MOSFET Description SL03N06 designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Switch applications and a wide variety of other small power supply applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDM Pulse Drain Current Tested ① ID Continuous Drain current@VGS=4.5V ② PD Maximum Power Dissipation RθJA Therma...