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MMIS60R580P Datasheet
MMIS60R580P
600V 0.58Ω N-channel MOSFET
Description
MMIS60R580P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 650 0.58
3 8 18
Unit V Ω V A nC
Package & Internal Circuit D
G D S
G S
Features
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages Switching Applications Adapter Motor Control DC – DC Converters
Ordering Information
Order Code
Marking
MMIS60R580PTH 60R580P
Temp. Range -55 ~ 150℃
Package
TO-251-VS (IPAK-VS)
Mar. 2016 Revision 1.1
1
Packing Tube
RoHS Status Halogen Free
MagnaChip Semiconductor Ltd.
MMIS60R580P Datasheet
Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter Drain – Source voltage Gate – Source voltage
Continuous drain current
Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness
Symbol VDSS VGSS
ID
IDM PD EAS dv/dt
Rating 600 ±30 8 5 24 70 170 50
Unit V V A A A W mJ
V/ns
Note
TC=25℃ TC=100℃
Diode dv/dt ruggedness
Storage temperature
Maximum operating junction temperature
1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS
dv/dt Tstg Tj
15 -55 ~150
150
V/ns ℃ ℃
Thermal Characteristics
Parameter Thermal resistance, junction-case max Thermal resistance, junction-ambient max
Symbol Rthjc Rthja
Value 1.8 62.5
Unit ℃/W ℃/W
Mar. 2016 Revision 1.1
2 MagnaChip Semiconductor Ltd.
MMIS60R580P Datasheet
Static Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Drain – Source Breakdown voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source On State Resistance
Symbol Min. Typ. Max. Unit Test Condition
V(BR)DSS 600
-
-
V VGS = 0V, ID=0.25mA
VGS(th) 2 3 4
V VDS = VGS, ID=0.25mA
IDSS - - 1 μA VDS = 600V, VGS = 0V
IGSS RDS(ON)
- - 100 nA VGS = ±30V, VDS =0V - 0.53 0.58 Ω VGS = 10V, ID = 2.5 A
Dynamic Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance Effective Output Capacitance Energy Related (3) Turn On Delay Time
Ciss Coss Crss Co(er) td(on)
- 575 - 428 - 25 - 18 - 14 -
VDS = 25V, VGS = 0V, pF f = 1.0MHz
VDS = 0V to 480V, VGS = 0V,f = 1.0MHz
Rise Time Turn Off Delay Time
tr td(off)
- 34 - 48 -
ns
VGS = 10V, RG = 25Ω, VDS = 300V, ID = 8 A
Fall Time
tf - 25 -
Total Gate Charge Gate – Source Charge Gate – Drain Charge
Qg - 18 -
Qgs
-
5
-
nC
VGS = 10V, VDS = 480V, ID = 8 A
Qgd - 7 -
Gate Resistance
RG
- 4.3 -
Ω VGS = 0V,.