2N3958

2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) –1.0 to –4.5 –50 1 IG Max (pA) –50 jVGS1 – VGS2j Max (mV) 25 FEATURES D Monolithic Design D High Slew Rate D Low Offset/Drift Voltage D Low Gate Leakage: 5 pA D Low Noise: 9 nV⁄√Hz D High CMRR: 100 dB BENEFITS D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal APPLICATIONS D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters DESCRIPTION The low cost 2N3958 JFET dual is designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The hermetically-sealed TO-71 package is available with full military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet). For similar products see 2N5196/5197/5198/5199, the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets. TO-71 S1 1 D1 2 G2 6 5 D2 3 G1 4 Top View S2 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 ...