Power MOSFET
Power MOSFET
IRFI640G, SiHFI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Description
Power MOSFET
IRFI640G, SiHFI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
70 13 39 Single
0.18
TO-220 FULLPAK
D
G
GDS
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES
Isolated Package
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
Sink to Lead Creepage Distance = 4.8 mm
Dynamic dV/dt Rating
Available
RoHS*
COMPLIANT
Low Thermal Resistance
Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK IRFI640GPbF SiHFI640G-E3 IRFI640G SiHFI640G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode R...
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