HX8N60

HX8N60 7.6 Amps，600Volts N-Channel MOSFET ■ Description The HX8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually usually used at high speed switching applications in power supplies .PWM motor controls, high efficient DC to DC converters and bridge circuits. ■ Features ● RDS(ON)=1.2Ω@VGS=10V ● Ultra Low gate charge(typical 28nC) ● Low reverse transfer capacitance(Crss=typical 12.0pF) ● Fast switching capability ● Avalanche energy tested ● Improved dv/dt capability,high ruggedness ■ Symbol Power MOSFET ■ Ordering Information Order Number Normal Lead Free Plating HX8N60-TA3-T HX8N60L-TA3-T HX8N60-TF3-T HX8N60L-TF3-T Note:Pin Assignment: G:Gate D:Drain S:Source HX8N60L-TA3-T （1）Packing Type （2）Package Type （3）Lead Plating Package TO-220 TO-220F Pin Assignment 123 GD S GD S Packing Tube Tube (1)T:Tube,R:Tape Reel (2)TA3:TO-220,TF3:TO-220F (3)L:Lead Free Plating Blank：Pb/Sn ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Symbol Ratings TO-220 TO-220F Drain-Source Voltage VDSS 600 Gate-Source Voltage Drain Currenet Continuous Tc=25℃ Tc=100℃ Drain Current Pulsed (Note 1) VGSS ID IDP ±30 7.6 7.6＊ 4.7 4.7＊ 30 30＊ Avalanche Energy Repetitive (Note 1) Single Pulse (Note 2) EAR EAS 14.7 230 Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 Total Power Dissipa...