HX4N60

HX4N60 4.4A mps，600Volts N-Channel MOSFET Power MOSFET ■ Description The HX4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features z RDS(ON) =2.50Ω@VGS = 10 V z Low gate charge ( typical 16nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability ■ Symbol ■ Ordering Information Order Number Normal Lead Free Plating HX4N60-TA3-T HX4N60L-TA3-T HX4N60-TF3-T HX4N60L-TF3-T HX4N60-TM3-T HX4N60L-TM3-T HX4N60-TN3-T HX4N60L-TN3-T HX4N60-TN3-R HX4N60L-TN3-R Note:Pin Assignment: G:Gate D:Drain S:Source HX4N60L-TA3-T （1）Packing Type （2）Package Type （3）Lead Plating Package TO-220 TO-220F TO-251 TO-252 TO-252 Pin Assignment 1 23 G DS G DS G DS G DS G DS Packing Tube Tube Tube Tube Tape Reel (1)T:Tube,R:Tape Reel (2)TA3:TO-220,TF3:TO-220F, TM3: TO-251,TN3: TO-252 (3)L:Lead Free Plating Blank：Pb/Sn ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Symbol TO-220 Ratings TO-220F TO-251 TO-252 Drain-Source Voltage VDSS 600 Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Tc=25℃ Tc=100℃ (Note 1) Avalanche Energy Repetitive Single Pulse (Note 1) (Note 2) Peak Diode Recovery dv/dt (Note 3) VGSS ID IDP EAR EAS dv/dt ±30 4.4 4.4 2.8 2.8 17.6 17.6＊ 10.6 260 4.5 2.8 1.8 11.2 4.9 Total Power Di...