HX8205

HX8205 Dual N-Channel Enhancement Mode Power MOSFET Description The HX8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 4A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management D1 D2 G1 G2 S1 S2 Schematic diagram Marking and pin Assignment SOT23-6L top view Package Marking And Ordering Information Device Marking 8205 Device HX8205 Device Package SOT23-6L Reel Size Ø180mm Tape width 8mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit 19.5 ±10 4 25 1.25 -55 To 150 Unit V V A A W ℃ HX8205 N-channel MOSFET Rever1.0 1 www.husintent.com Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=250μA VDS=19.5V,VGS=0V VGS=±10V,VDS=0V On Characteristics (Note 3) Gate Threshold Voltage VGS(th...