HX8205A

HX8205A Dual N-Channel Enhancement Mode Power MOSFET Description The HX8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 6A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management D1 D2 G1 G2 S1 S2 Schematic diagram Marking and pin Assignment TSSOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size 8205A HX8205A TSSOP-8 Ø330mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Tape width 12mm Quantity 3000 units Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit 19.5 ±10 6 25 1.5 -55 To 150 Unit V V A A W ℃ HX8205A N-channel MOSFET Rever1.0 1 www.husintent.com Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current Gate-Body Leakage Current IDSS VDS=19.5V,VGS=0V IGSS VGS=±10V,VDS=0V On Characteristics (Note 3) Gate Threshold Volta...