VS-6CWT10FN-E

VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A I-PAK (TO-251AA) Base common cathode 4 D-PAK (TO-252AA) Base common cathode 4 13 Anode 2 Anode Common cathode VS-6CUT10-E PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS 2 Common 1 cathode 3 Anode Anode VS-6CWT10FN-E D-PAK (TO-252AA), I-PAK (TO-251AA) 2x3A 100 V 0.63 V 1 mA at 125 °C 175 °C Common cathode 12 mJ FEATURES 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Compliant to RoHS Directive 2002/95/EC APPLICATIONS Specific for PV cells bypass diode High efficiency SMPS High frequency switching Output rectification Reverse battery protection Freewheeling DC/DC systems Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM VF 3 Apk, TJ = 125 °C (typical, per leg) TJ Range VALUES 100 0.6 - 55 to 175 UNITS V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL TEST CONDITIONS VR TJ = 25 °C VS-6CUT10-E VS-6CWT10FN-E 100 UNITS V Document Number: 94662 For technical questions within your region, please contact one of the following: Revision: 05-Jan-11 [email protected], [email protected], DiodesEurope@vis...