D1246

Ordering number:1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications · Power supplies, relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. Package Dimensions unit:mm 2003A [2SB926/2SD1246] ( ) : 2SB926 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)20V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE1 VCE=(–)2V, IC=(–)100mA hFE2 VCE=(–)2V, IC=(–)1.5A, pulse Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)50mA Common Base Output Capacitance Cob VCB=(–)10V, f=1MHz * : The 2SB926/2SD1246 are classified by 100mA hFE as follows : 100 R 200 140 S 280 200 T 400 280 U 560 JEDEC : TO-92 EIAJ : SC-43 SANYO : NP B : Base C : Collector E : Emitter Ratings (–)30 (–)25 (–)6 (–)2 (–)5 0.75 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 100* 65 130 150 19(32) max (–)0.1 (–)0.1 560* Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications tha...