1024 word x 4-Bit Static RAM
TOSHIBA MOS MEMORY PRODUCTS
1024 WORD x 4 BIT STATIC RAM
N CHANNEL SILICON GATE DEPLETION LOAD
TMM314AP TMM314APL TMM3...
Description
TOSHIBA MOS MEMORY PRODUCTS
1024 WORD x 4 BIT STATIC RAM
N CHANNEL SILICON GATE DEPLETION LOAD
TMM314AP TMM314APL TMM314AP-1 TMM314APL- I TMM314AP-3 TMM314APL-3
DESCRIPTION
TrvlM3 14l,P family IS 1024 wocd x 4 bit high speed read write ",emories operated with 5 V single power supp:y The memor;es w:th 6 T..- ceiJs are static In ooeration and require no clocks or refresh petlod and suitable for use in microprocessor application systems where high perfo'-mance, low cost, simple interfacing are important oesign objectives
TMM314AP family is able to be connected to
FEATURES
Fully decoded 1024 word x 4 bit organization Static operation - No clocks or refresh period
Single 5V supply voltage - Vec = 5V ± 10%
Easy memory expansion - CS input Three state output - Wired OR tie capability Inputs and outputs directly TTL compatible Data i'lput/output terminal is common Input protecteD - All inputs have protection
against static charge
2114 Type Pin compatible
TTL d:r2ctly ana to drive 1 STTL or 5 LSTTLS
TMM314AP family IS fabricated witn N channe silicon gate depletion 'Dad type MOS technology by ion implantation for fast speed, stable performance and reliablity,
The chip is moulded in the standard 18 oir> plastic package of 0.3 nch width for low cost and high densityassembly
Low Power dissipation and Access time
----=-.1-Power and Access time (maximum value) --------~- Acces;ti~---I- p~~-
TMM314AP-l
2150 ~s
550~
TMM314AP-3 TMM314AP TMM314APL-l
300 ns ___ +-...
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