K2275

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2275 is N-channel Power MOS Field Effect Transis- tor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A) LOW Ciss Ciss = 1 000 pF TYP. High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID (DC) ±3.5 A Drain Current (pulse) ID (pulse)* ±14 A Total Power Dissipation (TC = 25 °C) PT1 35 W Total Power Dissipation (Ta = 25 °C) PT2 2.0 W Storage Temperature Tstg –55 to +150 °C Channel Temperature Tch 150 °C Single Avalanche Current IAS** 3.5 A Single Avalanche Energy EAS** 22 mJ *PW ≤ 10 µs, Duty Cycle ≤ 1% **Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 10.0 ± 0.3 φ3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 13.5 MIN. 12.0 ± 0.2 3 ± 0.1 15.0 ± 0.3 123 4 ± 0.2 0.7 ± 0.1 2.54 TYP. 1.3 ± 0.2 0.65 ± 0.1 1.5 ± 0.2 2.54 TYP. 2.5 ± 0.1 123 1. Gate 2. Drain 3. Source MP-45F (ISOLATED TO-220) Drain (D) The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate (G) Body diode Source (S...