D1416

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1416 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1021 APPLICATIONS ·Hammer driver,pulse motor drive applications. ·High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 80 V 5V IC Collector Current-Continuous 7A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1416 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA ICBO Collector Cutoff Current VCB= 80V; IE= 0 1.5 V 2.0 V 2.5 V 100 μA IEBO Emitter Cutoff Current hFE -1 DC Current Gain VEB= 5V; IC= 0 IC= 3A; VCE= 3V 2000 3.0 mA 15000 hFE -2 DC Current Gain...