GA200SA60S

PD- 50070A /) 5)$5 INSULATED GATE BIPOLAR TRANSISTOR Features Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz Lowest conduction losses available Fully isolated package ( 2,500 volt AC) Very low internal inductance ( 5 nH typ.) Industry standard outline C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 100A n-channel Benefits Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages S O T -2 2 7 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw Max. 600 200 100 400 400 ± 20 155 2500 630 250 -55 to + 150 -55 to + 150 12 lbf in(1.3Nm) Units V A V mJ V W °C Thermal Resistance Parameter RθJC RθCS Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Weight of Module Typ. ––– 0.05 30 Max. 0.20 ––– ––– Units °C/W gm www.irf.com 1 4/24/2000 GA200SA60S ...