STT3981

Elektronische Bauelemente STT3981 -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications. FEATURES z Low On-Resistance z Low Gate Charge PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.90 Ref ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ TJ, TSTG THERMAL DATA Parameter Thermal Resistance Junction-ambient3 (Max) Symbol RθJA Ratings -20 ±8 -1.6 -1.3 -8 0.8 0.006 -55 ~ +150 Ratings 150 Unit V V A A W W/℃ ℃ Unit ℃/W 01-June-2005 Rev. B Page 1 of 5 Elektronische Bauelemente STT3981 -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Drain-Source Breakdown Voltage Gate Threshold Voltage Static BVDSS -20 - - V VGS = 0, ID=250...