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STT3998N Dataheets PDF



Part Number STT3998N
Manufacturers SeCoS
Logo SeCoS
Description Dual N-Channel MOSFET
Datasheet STT3998N DatasheetSTT3998N Datasheet (PDF)

Elektronische Bauelemente STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular an.

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Elektronische Bauelemente STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provide higher efficiency and extends battery life.  Low thermal impedance copper leadframe TSOP-6 saves board space.  Fast switching speed.  High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 20 RDS(on) (m 58@VGS= 4.5V 82@VGS= 2.5V ID(A) 3.7 3.1 TSOP-6 A E L 654 B 123 F DG K C H J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. GD SS GD ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range TA= 25°C TA= 70°C TA= 25°C TA= 70°C Symbol VDS VGS ID IDM IS PD Tj, Tstg Ratings Maximum 20 ±12 3.7 2.9 8 1.05 1.15 0.7 -55 ~ 150 Unit V V A A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient a Notes t ≦ 10 sec Steady State a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 27-Aug-2010 Rev. A Symbol RJA Typ. Max. 93 110 130 150 Unit °C / W Any changes of specification will not be informed individually. Page 1 of 2 Elektronische Bauelemente STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage VGS(th) 0.7 - - V VDS=VGS, ID= 250uA Gate-Body Leakage IGSS - - 1 uA VDS= 0V, VGS= 12V Zero Gate Voltage Drain Current On-State Drain Current a - - 0.1 VDS= 16V, VGS= 0V IDSS uA - -1 VDS= 16V, VGS= 0V, TJ= 55°C ID(on) 30 - - A VDS = 5V, VGS= 4.5V Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a RDS(ON) - - gfs - 10 VSD - 0.8 DYNAMIC b 58 82 - VGS= 4.5V, ID= 3.7A mΩ VGS= 2.5V, ID= 2.7A S VDS= 10V, ID= 6.8A V IS= 1.05A, VGS= 0V Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg - 7.5 - Qgs - 0.6 - nC VDS= 10V, VGS= 4.5V, ID= 3.7A Qgd - 1.0 - Turn-on Delay Time Td(on) - 5 - Rise Time Turn-off Delay Time Tr Td(off) - 12 13 - nS VDD= 10V, VGS= 4.5V, RGEN= 15, ID= 1A Fall Time Tf - 7 Notes a. Pulse test:PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. .


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