Document
Elektronische Bauelemente
STT3998N
Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provide higher efficiency and extends battery life.
Low thermal impedance copper leadframe TSOP-6 saves board space.
Fast switching speed. High performance trench technology.
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V) 20
RDS(on) (m 58@VGS= 4.5V 82@VGS= 2.5V
ID(A) 3.7 3.1
TSOP-6
A E
L
654
B
123
F DG
K
C
H J
REF.
A B C D E F
Millimeter
Min. Max.
2.70 3.10 2.60 3.00 1.40 1.80
1.10 MAX. 1.90 REF. 0.30 0.50
REF.
G H J K L
Millimeter
Min. Max.
0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.
GD SS GD
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
Operating Junction and Storage Temperature Range
TA= 25°C TA= 70°C
TA= 25°C TA= 70°C
Symbol
VDS VGS
ID
IDM IS
PD
Tj, Tstg
Ratings
Maximum
20 ±12 3.7 2.9
8 1.05 1.15 0.7 -55 ~ 150
Unit
V V
A
A A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient a Notes
t ≦ 10 sec Steady State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
27-Aug-2010 Rev. A
Symbol RJA
Typ. Max.
93 110 130 150
Unit
°C / W
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
STT3998N
Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
VGS(th)
0.7
-
-
V VDS=VGS, ID= 250uA
Gate-Body Leakage
IGSS - - 1 uA VDS= 0V, VGS= 12V
Zero Gate Voltage Drain Current On-State Drain Current a
- - 0.1
VDS= 16V, VGS= 0V
IDSS
uA
- -1
VDS= 16V, VGS= 0V, TJ= 55°C
ID(on)
30
-
-
A VDS = 5V, VGS= 4.5V
Drain-Source On-Resistance a
Forward Transconductance a Diode Forward Voltage a
RDS(ON)
-
-
gfs - 10 VSD - 0.8
DYNAMIC b
58 82 -
VGS= 4.5V, ID= 3.7A mΩ
VGS= 2.5V, ID= 2.7A
S VDS= 10V, ID= 6.8A
V IS= 1.05A, VGS= 0V
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg - 7.5 -
Qgs
-
0.6
-
nC
VDS= 10V, VGS= 4.5V, ID= 3.7A
Qgd - 1.0 -
Turn-on Delay Time
Td(on)
-
5
-
Rise Time Turn-off Delay Time
Tr Td(off)
-
12 13
-
nS
VDD= 10V, VGS= 4.5V, RGEN= 15, ID= 1A
Fall Time
Tf - 7
Notes
a. Pulse test:PW ≦ 300 us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
.