Power MOSFET
NTMFS4925N
Power MOSFET
30 V, 48 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Lo...
Description
NTMFS4925N
Power MOSFET
30 V, 48 A, Single N−Channel, SO−8 FL
Features
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA Power Dissipation RqJA (Note 1) Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C TA = 100°C TA = 25°C
TA = 25°C TA = 100°C
VDSS VGS ID
PD
ID
30 ±20 16.7 10.5 2.70
25.2 15.9
V V A
W
A
Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain C(Nuortreen2t)RqJA
Steady State
TA = 25°C
TA = 25°C TA = 100°C
PD ID
6.16 W
9.7 A 6.2
Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C TC =100°C
PD ID
0.92 W
48 A 30
Power Dissipation RqJC (Note 1) Pulsed Drain Current
TC = 25°C TA = 25°C, tp = 10 ms
PD IDM
23.2 W 195 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 15.7 Apk, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IDmax TJ, TSTG IS dV/dt EAS
TL
100 −55 to +150
21 6.0 37
A °C
A V/ns mJ
260 °C
Stresses exceedin...
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