HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
PD -5.058B
PRELIMINARY
GA200TS60U
Ultra-FastTM Speed IGBT
VCES = 600V VCE(on) typ. = 1.8V
@VGE = 15V, IC = 200A
"HALF...
Description
PD -5.058B
PRELIMINARY
GA200TS60U
Ultra-FastTM Speed IGBT
VCES = 600V VCE(on) typ. = 1.8V
@VGE = 15V, IC = 200A
"HALF-BRIDGE" IGBT INT-A-PAK
Features
Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Very low conduction and switching losses HEXFRED™ antiparallel diodes with ultra- soft recovery Industry standard package UL approved
Benefits
Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C I CM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range
Max.
600 200 400 400 400 ±20 2500 625 325 -40 to +150 -40 to +125
Units
V A
V W °C
Thermal / Mechanical Characteristics
Parameter
RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module
Typ.
— — 0.1 — — 200
Max.
0.20 0.35 — 4.0 3.0 —
Units
°C/W N. m g
w...
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