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KM23C4000D Dataheets PDF



Part Number KM23C4000D
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 4M-Bit (512Kx8) CMOS MASK ROM
Datasheet KM23C4000D DatasheetKM23C4000D Datasheet (PDF)

KM23C4000D(G) 4M-Bit (512Kx8) CMOS MASK ROM FEATURES • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. KM23C4000D : 32-DIP-600 -. KM23C4000DG : 32-SOP-525 CMOS MASK ROM GENERAL DESCRIPTION The KM23C4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using .

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KM23C4000D(G) 4M-Bit (512Kx8) CMOS MASK ROM FEATURES • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. KM23C4000D : 32-DIP-600 -. KM23C4000DG : 32-SOP-525 CMOS MASK ROM GENERAL DESCRIPTION The KM23C4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The KM23C4000D is packaged in a 32-DIP and the KM23C4000DG in a 32-SOP. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION A18 . . . . . . . . A0 X BUFFERS AND DECODER Y BUFFERS AND DECODER CE CONTROL OE LOGIC MEMORY CELL MATRIX (524,288x8) SENSE AMP. BUFFERS ... Q0 Q7 Pin Name A0 - A18 Q0 - Q7 CE OE VCC VSS N.C Pin Function Address Inputs Data Outputs Chip Enable Output Enable Power(+5V) Ground No Connection N.C 1 A16 2 A15 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 Q0 13 Q1 14 Q2 15 VSS 16 DIP & SOP 32 VCC 31 A18 30 A17 29 A14 28 A13 27 A8 26 A9 25 A11 24 OE 23 A10 21 CE 21 Q7 20 Q6 19 Q5 18 Q4 17 Q3 KM23C4000D(G) KM23C4000D(G) CMOS MASK ROM ABSOLUTE MAXIMUM RATINGS Item Voltage on Any Pin Relative to VSS Temperature Under Bias Storage Temperature Symbol VIN TBIAS TSTG Rating -0.3 to +7.0 -10 to +85 -55 to +150 Unit V °C °C NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS(Voltage reference to VSS, TA=0 to 70°C) Item Symbol Min Typ Max Supply Voltage VCC 4.5 5.0 5.5 Supply Voltage VSS 0 0 0 Unit V V DC CHARACTERISTICS Parameter Operating Current Standby Current(TTL) Standby Current(CMOS) Input Leakage Current Output Leakage Current Input High Voltage, All Inputs Input Low Voltage, All Inputs Output High Voltage Level Output Low Voltage Level Symbol ICC ISB1 ISB2 ILI ILO VIH VIL VOH VOL Test Conditions CE=OE=VIL, all outputs open CE=VIH, all outputs open CE=VCC, all outputs open VIN=0 to VCC VOUT=0 to VCC IOH=-400µA IOL=2.1mA Min Max - 50 -1 - 50 - 10 - 10 2.2 VCC+0.3 -0.3 0.8 2.4 - - 0.4 NOTE : Minimum DC Voltage(VIL) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage(VIH) is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns. Unit mA mA µA µA µA V V V V MODE SELECTION CE H L OE X H L Mode Standby Operat.


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