A1318

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1318 TRANSISTOR (PNP) FEATURES z Large Current Capacity and Wide ASO APPLICATIONS z Capable of Being Used in The Low Frequency to High Frequency Range TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -50 -6 -0.2 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE (sat) Cob fT Test conditions IC=-0.01mA,IE=0 IC=-1mA,IB=0 IE=-0.01mA,IC=0 VCB=-40V,IE=0 VEB=-5V,IC=0 VCE=-6V, IC=-1mA VCE=-6V, IC=-0.1mA IC=-100mA,IB=-10mA IC=-100mA,IB=-10mA VCB=-6V, f=1MHz VCE=-6V,IC=-10mA Min Typ Max Unit -60 V -50 V -6 V -0.1 μA -0.1 μA 100 560 70 -0.3 V -1.0 V 4.5 pF 200 MHz CLASSIFICATION OF hFE(1) RANK R RANGE 100-200 S 140-280 T 200-400 U 280-560 A,Dec,2010 ...